by SEMIKRON
0698
B 16 57
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
Inverter
(Chopper see SKiiP 22 NAB 12)
V
CES
V
GES
I
C
I
CM
I
F
= I
C
I
FM
= I
CM
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
T
heatsink
= 25 / 80 C
t
p
< 1 ms; T
heatsink
= 25 / 80 C
1200
20
45 / 30
90 / 60
38 / 26
76 / 52
V
V
A
A
A
A
Bridge Rectifier
V
RRM
I
D
I
FSM
I
2
t
T
heatsink
= 80 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
t
p
= 10 ms; sin. 180 , T
j
= 25 C
1500
35
700
2400
V
A
A
A
2
s
T
j
T
stg
V
isol
AC, 1 min.
40 . . . + 150
40 . . . + 125
2500
C
C
V
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IGBT - Inverter
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 30 A
T
j
= 25 (125)
C
V
CC
= 600 V; V
GE
= 15 V
I
C
= 30 A; T
j
= 125
C
R
gon
= R
goff
= 39
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,5(3,1)
55
55
400
45
7,8
2,0
3,0(3,7)
110
110
600
90
0,7
V
ns
ns
ns
ns
mJ
nF
K/W
IGBT - Chopper *
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
I
C
= 15 A
T
j
= 25 (125)
C
V
CC
= 600 V; V
GE
= 15 V
I
C
= 15 A; T
j
= 125
C
R
gon
= R
goff
= 82
inductive load
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
2,5(3,1)
55
45
400
70
4,0
1,0
3,0(3,7)
110
90
600
100
1,4
V
ns
ns
ns
ns
mJ
nF
K/W
Diode
2)
- Inverter (Diode
2)
- Chopper see SKiiP 22 NAB 12)
V
F
= V
EC
V
TO
r
T
I
RRM
Q
rr
E
off
R
thjh
I
F
= 25 A
T
j
= 25 (125)
C
T
j
= 125 C
T
j
= 125 C
I
F
= 25 A, V
R
= 600 V
di
F
/dt = 500 A/
s
V
GE
= 0 V, T
j
= 125 C
per diode
2,0(1,8)
1,0
32
25
4,5
1,0
2,5(2,3)
1,2
44
1,2
V
V
m
A
C
mJ
K/W
Diode - Rectifier
V
F
R
thjh
I
F
= 35 A, T
j
= 25 C
per diode
1,2
1,6
V
K/W
Temperature Sensor
R
TS
T = 25 / 100 C
1000 / 1670
Mechanical Data
M
1
Case
case to heatsink, SI Units
mechanical outline see page
B 16 9
2
M3
2,5
Nm
SKiiP 31 NAB 12
MiniSKiiP 3
SEMIKRON integrated
intelligent Power
SKiiP 31 NAB 12
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M3
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics B 16 4
Options
also available with powerful
chopper. For characteristics
please refer to Inverter IGBT
1)
T
heatsink
= 25 C, unless
otherwise specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12
B 16 58
0698
by SEMIKRON
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
T
j
= 125 C
V
CE
= 600 V
V
GE
= 15 V
I
C
= 35 A
T
j
= 125 C
V
CE
= 600 V
V
GE
= 15 V
R
G
= 39
I
Cpuls
= 35 A
V
GE
= 0 V
f = 1 MHz
Fig. 1 Typ. output characteristic, t
p
= 80
s; 25 C
Fig. 2 Typ. output characteristic, t
p
= 80
s; 125 C
Fig. 5 Typ. gate charge characteristic
Fig. 6 Typ. capacitances vs. V
CE
B 16 4
0698
by SEMIKRON
T
j
=
150 C
V
GE
= 15 V
t
sc
=
10
s
L
ext
< 25 nH
T
j
=
150 C
V
GE
= 15 V
T
j
= 150 C
V
GE
=
15 V
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
ICop / IC
Mini1207
Th [C]
0
0,5
1
1,5
2
2,5
0
500
1000
1500
ICpuls/IC
Mini1209
VCE [V]
0
2
4
6
8
10
12
0
500
1000
1500
Note:
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
ICsc/ICN
Mini1210
VCE [V]
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
MiniSKiiP 1200 V
MiniSKiiP 3
SKiiP 30 NAB 06
SKiiP 31 NAB 06
SKiiP 32 NAB 06
SKiiP 30 NAB 12
SKiiP 31 NAB 12
SKiiP 32 NAB 12
Circuit
Case M3
Layout and connections for the
customer's printed circuit board
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